硒化鎢鉬晶體 MoWSe2（Molybdenum Tungsten Diselenide）
晶體尺寸：6毫米
電學性能：半導體
晶體結(jié)構(gòu)：六邊形
晶胞參數(shù)：取決于合金成分：a = b = 0.31 -0.33 nm and c = 1.21 -1.30 nm, α = β = 90°, γ = 120°
晶體類型：合成
晶體純度：＞99.995%

硒化鎢鉬晶體 MoWSe2(Molybdenum Tungsten Diselenide)
晶體尺寸：6毫米
電學性能：半導體
晶體結(jié)構(gòu)：六邊形
晶胞參數(shù)：取決于合金成分：a = b = 0.31 -0.33 nm and c = 1.21 -1.30 nm, α = β = 90°, γ = 120°
晶體類型：合成
晶體純度：＞99.995%

 

X-ray diffraction on a MoWSe2 single crystal aligned along the (001) plane. XRD was performed at room temperature using a D8 Venture Bruker. The 5 XRD peaks correspond, from left to right, to (00l) with l = 2, 4, 6, 8, 10

 

 

Powder X-ray diffraction (XRD) of a single crystal MoWSe2. X-ray diffraction was performed at room temperature using a D8 Venture Bruker.

 

Stoichiometric analysis of a single crystal MoWSe2 by Energy-dispersive X-ray spectroscopy (EDX).

 

Raman spectrum of a single crystal MoWSe2. Measurement was performed with a 785 nm Raman system at room temperature.